document number: 93523 for technical questions within your region, please contact one of the following: www.vishay.com revision: 18-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 30 a fred pt ? vs-eth3006-m3, VS-ETH3006FP-M3 vishay semiconductors features ? hyperfast soft recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? fully isolated package (v ins = 2500 v rms ) ? true 2 pin package ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? designed and qualified ac cording to jedec-jesd47 description/applications hyperfast recovery rectifiers designed with optimized performance of forward volt age drop, hyperfast recovery time, and soft recovery. the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. the extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package 2l to-220ac, 2l to-220fp i f(av) 30 a v r 600 v v f at i f 2.65 v t rr (typ.) 27 ns t j max. 175 c diode variation single die 2l to-220ac 2l to-220 full-pak ba s e cathode 2 3 anode 1 cathode 2 anode 1 cathode v s -eth 3 006-m 3 v s -eth 3 006fp-m 3 absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current in dc i f(av) t c = 131 c 30 a full-pak t c = 51 c non-repetitive peak surge current i fsm t j = 25 c 180 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 30 a - 2.0 2.65 i f = 30 a, t j = 150 c - 1.4 1.8 reverse leakage current i r v r = v r rated - 0.02 30 a t j = 150 c, v r = v r rated - 50 300 junction capacitance c t v r = 600 v - 20 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93523 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006-m3, VS-ETH3006FP-M3 vishay semiconductors hyperfast rectifier, 30 a fred pt ? dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - 26 35 ns t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v -26- t j = 125 c - 70 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7.6 - reverse recovery charge q rr t j = 25 c - 50 - nc t j = 125 c - 280 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case r thjc - 0.84 1.3 c/w full-pak - 3.2 3.8 thermal resistance, junction to ambient r thja typical socket mount - - 70 typical thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2-g -0.07- oz. mounting torque 6 (5) - 12 (10) kgf cm (lbf in) marking device case style 2l to-220ac eth3006 case style 2l to-220 full-pak eth3006fp
document number: 93523 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006-m3, VS-ETH3006FP-M3 hyperfast rectifier, 30 a fred pt ? vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v f (v) instantaneous forward current - i f (a) 0.00.51.01.52.02.53.03.5 1 10 100 1000 tj = 25c tj = 150c tj = 175c 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 100 1000 150c 175c 25c 50c 75c 125c 100c reverse current - i r (a) reverse voltage - v r (v) reverse voltage - v r (v) junction capacitance - c t (pf) 0 100 200 300 400 500 600 1 10 100 1000 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93523 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006-m3, VS-ETH3006FP-M3 vishay semiconductors hyperfast rectifier, 30 a fred pt ? fig. 5 - maximum thermal impedance z thjc characteristics (full-pak) fig. 6 - maximum allowable case temperature vs. average forward current fig. 7 - maximum allowable case temperature vs. average forward current (full-pak) fig. 8 - forward power loss characteristics t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.1 1 10 single pulse (thermal resistance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01 average forward current - i f (av) (a) allowable case temperature (c) 0 5 10 15 20 25 30 35 120 130 140 150 160 170 180 dc average forward current - i f (av) (a) allowable case temperature (c) 0 5 10 15 20 25 30 35 20 40 60 80 100 120 140 160 180 dc average forward current - i f (av) (a) average power loss ( watts ) 0 5 10 15 20 25 30 35 40 45 0 20 40 60 80 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 dc rms limit
document number: 93523 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006-m3, VS-ETH3006FP-M3 hyperfast rectifier, 30 a fred pt ? vishay semiconductors fig. 9 - typical re verse recovery vs. di f /dt fig. 10 - typical stored charge vs. di f /dt fig. 11 - reverse recovery parameter test circuit fig. 12 - reverse recovery waveform and definitions trr ( ns ) di f /dt (a/s ) 100 1000 10 20 30 40 50 60 70 80 90 if = 30 a, 125c if = 30 a, 25c typical value qrr ( nc ) di f /dt (a/s ) 100 1000 0 100 200 300 400 500 600 700 800 900 if = 30 a, 125c if = 30 a, 25c typical value irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93523 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006-m3, VS-ETH3006FP-M3 vishay semiconductors hyperfast rectifier, 30 a fred pt ? ordering information table ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description vs-eth3006-m3 50 1000 antistatic plastic tube VS-ETH3006FP-M3 50 1000 ant istatic plastic tube links to related documents dimensions 2l to-220ac www.vishay.com/doc?95259 2l to-220 full-pak www.vishay.com/doc?95260 part marking information 2l to-220ac www.vishay.com/doc?95391 2l to-220 full-pak www.vishay.com/doc?95392 3 - t = to-220 4 - h = hyperfast recovery time 5 - current code: 30 = 30 a 6 - voltage code: 06 = 600 v 7 - fp = full-pak none = to-220 e = single diode 2 - circuit configuration: 1 - vishay semiconductors product - environmental digit: -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 8 device code 5 1 3 2 4 6 7 8 vs- e t h 30 06 fp -m3
outline dimensions www.vishay.com vishay semiconductors revision: 05-dec-12 1 document number: 95259 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 true 2 pin to-220 dimensions in millimeters and inches notes (1) lead dimension and fini sh uncontrolled in l 1 ? these dimensions are within allowable dime nsions of jedec to-220ab re v. j outline dated 3-24-87 ? controling dimension: inch e a f te r m . 4 e d l 0.150" ref. 0.002" 0.05 mm h 1 ? p q b 1 l 1 b j 1 c 12 ? 2.0 mm ref. 60 45 b a symbol millimeters inches min. max. min. max. a 4.32 4.57 0.170 0.180 b 0.71 0.91 0.028 0.036 b 1 1.15 1.39 0.045 0.055 c 0.36 0.53 0.014 0.021 d 14.99 15.49 0.590 0.610 e 10.04 10.41 0.395 0.410 e 5.08 bsc 0.200 bsc f 1.22 1.37 0.048 0.054 h 1 5.97 6.47 0.235 0.255 j 1 2.54 2.79 0.100 0.110 l 13.47 13.97 0.530 0.550 l 1 (1) 3.31 3.81 0.130 0.150 ? p 3.79 3.88 0.149 0.153 q 2.60 2.84 0.102 0.112
outline dimensions www.vishay.com vishay semiconductors revision: 05-dec-12 1 document number: 95260 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 true 2 pin to-220 full-pak dimensions in millimeters and inches ? q e a f e l h 1 c j 1 b d l 1 q 2 q 1 b 1 symbol millimeters inches min. max. min. max. a 4.53 4.93 0.178 0.194 b 0.71 0.91 0.028 0.036 b 1 1.15 1.39 0.045 0.055 c 0.36 0.53 0.014 0.021 d 15.67 16.07 0.617 0.633 e 9.96 10.36 0.392 0.408 e 5.08 typical 0.200 typical f 2.34 2.74 0.092 0.107 h 1 6.50 6.90 0.256 0.272 j 1 2.56 2.96 0.101 0.117 l 12.78 13.18 0.503 0.519 l 1 2.23 2.63 0.088 0.104 ? q 2.98 3.38 0.117 0.133 q 1 3.10 3.50 0.122 0.138 q 2 14.80 15.20 0.583 0.598 ? 0 5 0 5
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